4-Day Short Term Course
on
Technology CAD (TCAD) for VLSI Design
June 4 - 7, 2008
for
Engineering College Teachers
Coordinator
Prof. C K Maiti
Department of Electronics & Electrical Communication Engineering
Indian Institute of Technology
Kharagpur - 721302
Phone: 03222-283532 (O) 281475 (Lab.)
Fax: 03222-255303
E-mail: ckm@ece.iitkgp.ernet.in
(Desirable mode of communication)
Scope of the Course
Scaling of devices has been the basic principle for continuing progress in the development of VLSI. With the advancements in semiconductor manufacturing; it is becoming difficult for the VLSI designers to optimize the design without considering the effects of the VLSI processes. Devices with submicron geometries are no more producing the same characteristics predicted by analytical models found in the textbooks of early years. In this context, process and device modeling have gained tremendous importance in pushing the performance limits of VLSI functional modules. This course is aimed at emphasizing the critical role of Technology CAD (TCAD) towards VLSI design through properly embracing the high level architectural synthesis along with the low level process and device modeling. While modeling of semiconductor processing will be discussed in this course, process and device simulation tools will be introduced in the laboratory sessions. Bipolar, MOS, and BiCMOS processes will be covered. In the high level VLSI design, the impact of the process variation on the system performance and thus the importance of process corner analysis will be emphasized. Various techniques as adopted at the architectural level as well as the circuit level designs for nullifying the effect of process variation will be outlined in the course. Flexible processes and bridging of TCAD and ECAD will be the key emphasis for new generation technologies.
How to Reach - IIT Kharagpur
The IIT is located at Kharagpur, an important railway town about 116 km west of Kolkata. Kharagpur is well connected to almost all part of the country by train. There are frequent train services from Howrah railway station to Kharagpur. The institute is about 5 km away from Kharagpur station and can be reached by taxis, auto-rickshaws, cycle-rickshaws etc. Accommodation will be arranged in a Guest House.
About the Speakers
Prof. C K Maiti is a Professor in the Department of Electronics and Electrical Communication Engineering, IIT-Kharagpur. He has co-authored 4 books and monographs and edited the Selected Works of Physics Nobel Prize Winner Professor Herbert Kroemer. He has published more than 200 technical articles in the TCAD, Silicon-Germanium and strained Silicon areas. He has also served as the Guest Editor for the Special Issues on Silicon-Germanium of Solid-State Electronics (November 2001 issue) and Heterostructure Silicon (August 2004 issue). His main area of research is silicon heterostructures and TCAD.
Prof. A. S. Dhar obtained his B Tech degree from Bengal Engg. College, followed by M.Tech., and Ph.D. from IIT Kharagpur. He is presently an Associate Professor in Electronics and Electrical Communication Engineering, with teaching and research interests in VLSI architecture design for real time signal processing and communication.
Registration Fee: Rs. 4500.00
[This includes accommodation and course materials.]
Important Date
Last date for registration: 15th May, 2008
[Completed application should be received by the Coordinator latest by this date]
How to Apply:
Interested teachers may kindly apply in the format given below along with the registration fee, paid through a demand draft, drawn in favor of "CEP-STC, IIT Kharagpur" and payable at Kharagpur. The number of seats is limited and thus candidates are advised to register early.
Download Registration Form
For More Details CLICK HERE
on
Technology CAD (TCAD) for VLSI Design
June 4 - 7, 2008
for
Engineering College Teachers
Coordinator
Prof. C K Maiti
Department of Electronics & Electrical Communication Engineering
Indian Institute of Technology
Kharagpur - 721302
Phone: 03222-283532 (O) 281475 (Lab.)
Fax: 03222-255303
E-mail: ckm@ece.iitkgp.ernet.in
(Desirable mode of communication)
Scope of the Course
Scaling of devices has been the basic principle for continuing progress in the development of VLSI. With the advancements in semiconductor manufacturing; it is becoming difficult for the VLSI designers to optimize the design without considering the effects of the VLSI processes. Devices with submicron geometries are no more producing the same characteristics predicted by analytical models found in the textbooks of early years. In this context, process and device modeling have gained tremendous importance in pushing the performance limits of VLSI functional modules. This course is aimed at emphasizing the critical role of Technology CAD (TCAD) towards VLSI design through properly embracing the high level architectural synthesis along with the low level process and device modeling. While modeling of semiconductor processing will be discussed in this course, process and device simulation tools will be introduced in the laboratory sessions. Bipolar, MOS, and BiCMOS processes will be covered. In the high level VLSI design, the impact of the process variation on the system performance and thus the importance of process corner analysis will be emphasized. Various techniques as adopted at the architectural level as well as the circuit level designs for nullifying the effect of process variation will be outlined in the course. Flexible processes and bridging of TCAD and ECAD will be the key emphasis for new generation technologies.
How to Reach - IIT Kharagpur
The IIT is located at Kharagpur, an important railway town about 116 km west of Kolkata. Kharagpur is well connected to almost all part of the country by train. There are frequent train services from Howrah railway station to Kharagpur. The institute is about 5 km away from Kharagpur station and can be reached by taxis, auto-rickshaws, cycle-rickshaws etc. Accommodation will be arranged in a Guest House.
About the Speakers
Prof. C K Maiti is a Professor in the Department of Electronics and Electrical Communication Engineering, IIT-Kharagpur. He has co-authored 4 books and monographs and edited the Selected Works of Physics Nobel Prize Winner Professor Herbert Kroemer. He has published more than 200 technical articles in the TCAD, Silicon-Germanium and strained Silicon areas. He has also served as the Guest Editor for the Special Issues on Silicon-Germanium of Solid-State Electronics (November 2001 issue) and Heterostructure Silicon (August 2004 issue). His main area of research is silicon heterostructures and TCAD.
Prof. A. S. Dhar obtained his B Tech degree from Bengal Engg. College, followed by M.Tech., and Ph.D. from IIT Kharagpur. He is presently an Associate Professor in Electronics and Electrical Communication Engineering, with teaching and research interests in VLSI architecture design for real time signal processing and communication.
Registration Fee: Rs. 4500.00
[This includes accommodation and course materials.]
Important Date
Last date for registration: 15th May, 2008
[Completed application should be received by the Coordinator latest by this date]
How to Apply:
Interested teachers may kindly apply in the format given below along with the registration fee, paid through a demand draft, drawn in favor of "CEP-STC, IIT Kharagpur" and payable at Kharagpur. The number of seats is limited and thus candidates are advised to register early.
Download Registration Form
For More Details CLICK HERE